| PART |
Description |
Maker |
| AM29LV400B-100WAC AM29LV400B-100WACB AM29LV400B-10 |
PTSE 6C 6#20 SKT RECP
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Metal; Series:MS C-26482 Series I; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Cable Receptacle RoHS Compliant: No
Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3120; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
FEEDTHRU CAPACITOR, 470PF 4A 100VFEEDTHRU CAPACITOR, 470PF 4A 100V; Capacitance:0.47nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp,
CAP 0.47UF 50V 50-20% X7R SMD-0612 TR-7 PLATED-NI/SN HC-FEEDTHRU
PTSE 3C 3#20 PIN RECP
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 100 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 150 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM41DL1634DB30IT AM41DL1634DB45IS AM41DL1634DB70IS |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
| AM29SL400CB100REC AM29SL400CT100REC AM29SL400CT100 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
|
AMD[Advanced Micro Devices]
|
| AM29F400BT-90DTI2 AM29F400BT-90DTE2 AM29F400BT-90D |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 2
|
Advanced Micro Devices, Inc.
|
| AM29F400BB-120DPE2 AM29F400BT-75DTC2 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 2
|
ADVANCED MICRO DEVICES INC
|
| AM29SL400CT100REI AM29SL400CT150WAF AM29SL400CB120 |
CAP 150UF 4V 20% TANT SMD-7343-30 TR-7
M16C Series, 6N4 Group, 3-ch IEBus, 3-phase PWM, CRC 100P6Q-A; Vcc= 3.0 to 5.5 volts, Temp= -40 to 85 C; Package: PLQP0100KB-A
High Speed CMOS Logic Octal Inverting Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
High Speed CMOS Logic Octal InvertingTransparent Latch with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
High Speed CMOS Logic Octal Positive-Edge Triggered D-Type Flip-Flops with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
High Speed CMOS Logic 12-Stage Binary Counter 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 110 ns, PDSO48
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 100 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
|
Spansion Inc.
Spansion, Inc.
Xicon Passive Components
Amphenol, Corp.
|
| M410000027 M410000022 M41000001Z M41000001W |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同时作业闪存兆位12亩x 8-Bit/256亩x 16位），静态存储器
|
Advanced Micro Devices, Inc.
|
| AM27C040 AM27C040-120 AM27C040-120DCB AM27C040-120 |
4 Megabit (512 K x 8-Bit) CMOS EPROM
SEAL,NEOPRENE,CYLINDRICAL CONNECTR& 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 120 ns, CDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 4兆位12亩8位）的CMOS存储
Dual 4-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 150 ns, CDIP32
8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 512K X 8 OTPROM, 120 ns, PDIP32
8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-PDIP 0 to 70 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 150 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 120 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 90 ns, CDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PQCC32
MEMORY KEY, USBFTV, SEALED, 1GB; Colour:Green; Series:USB FTV RoHS Compliant: No
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| AM29F200A-1 AM29F200AB-120DGC AM29F200AB-120DGC1 A |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash MemoryDie Revision 1
PCB COPPER CLAD 6X9 1/32 2-SIDE
DIN Audio Connector; Number of Contacts:5; Contact Termination:Solder; Mounting Type:Panel; Gender:Receptacle; Contact Plating:Silver; Series:C091A
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 256K X 8 FLASH 5V PROM, 90 ns, UUC42
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位256亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修
M39012 MIL RF CONNECTOR 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| MSM64Q424-NGS-K MSM64422-XXXMS-K MSM64424-XXXMS-K |
Built-in 256/512-Bit EEPROM and LCD Driver 4-Bit Microcontroller 内置256/512-Bit EEPROM和LCD驱动位微控制
|
OKI SEMICONDUCTOR CO., LTD.
|
| AM29SL800CT150WBC AM29SL800CB120EI AM29SL800CB120E |
CAP 150UF 6.3V 20% TANT SMD-7343-30 TR-7
Quad 2-Input NOR Gates 14-SOIC -55 to 125 8兆位 M中的x 8-Bit/512亩x 16位）.8伏的CMOS只超低电压快闪记忆体
IC LOGIC 1G79 SINGLE POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP -40 85C SOT-23-5 3000/REEL 1M X 8 FLASH 1.8V PROM, 100 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.8伏的CMOS只超低电压快闪记忆体
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 120 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 100 ns, PDSO48
16-Bit Buffer/Line Driver, OE Active Low
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
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